文献类型：期刊文献

英文题名：S-scheme electron transfer promoted by novel indium oxide quantum dot–loaded carbon nitride heterojunctions promoted using oxidized indium monomers

作者：Li, Xiang[1] Wang, Yunyi[2] Wu, Ting[1] Fang, Guigan[1,3]

第一作者：Li, Xiang

机构：[1] Institute of Chemical Industry of Forest Products, Chinese Academy of Forestry, Key Lab. of Biomass Energy and Material, Jiangsu Province, Co-Innovation Center of Efficient Processing and Utilization of Forest Resource, Jiangsu Province, Key Lab. of Chemical Engineering of Forest Products, National Forestry and Grassland Administration, National Engineering Lab. for Biomass Chemical Utilization, Nanjing, 210042, China; [2] Heilongjiang Provincial Key University Laboratory of Processing Agricultural Products, College of Food and Bioengineering, Qiqihar University, Qiqihar, 161006, China; [3] Shandong Huatai Paper Co., Ltd., Shandong Province, Dongying, 257335, China

年份：2024

卷号：668

起止页码：658-665

外文期刊名：Journal of Colloid and Interface Science

收录：EI(收录号：20240092510);Scopus(收录号：2-s2.0-85191656133)

语种：英文

外文关键词：Carbon nitride - Carrier lifetime - Conversion efficiency - Degradation - Electrons - Gas chromatography - Heterojunctions - Indium compounds - Mass spectrometry - Nanocrystals - Photoelectricity - Semiconductor quantum dots - Thermooxidation

摘要：The graphitic carbon nitride (g-C3N4) photocatalysis has emerged as a clean method for cleaving lignin-linked bonds due to its mild and sunlight-driven reaction conditions. The fast electron–hole pair complex of g-C3N4 constrains its degradation efficiency, making the heterojunction construction a popular solution. The conventional methods of preparing g-C3N4 heterojunctions by physical mixing destroy π-conjugations in g-C3N4, reducing the adsorption of lignin containing benzene rings. In this study, a novel indium oxide (In2O3) quantum dot–g-C3N4 0D/2D heterojunction was prepared through the high-temperature oxidation of pre-prepared indium-doped g-C3N4. The introduction of In2O3 at the quantum dot level minimizes the interference with lignin adsorption capacity. The strong combination of the two (In2O3 and g-C3N4) increases the intersection interface area, promoting the S-scheme transfer route of the photogenerated electrons. Consequently, this enhances the photoelectric conversion efficiency and carrier lifetime of the heterojunction, and inhibits the rapid recombination of photogenerated electron–hole pairs in g-C3N4. The proposed heterojunction was 3 times more efficient than g-C3N4 alone for selective cleavage of lignin β–O–4 bonds after 2 h of sunlight irradiation. Combined with inhibitor experiments and gas chromatography–mass spectrometry analysis, this paper defines the reactive oxides and proposes a cleavage pathway for the lignin β–O–4 bonds in In2O3–g-C3N4 heterojunction system. ? 2024