详细信息
S-scheme electron transfer promoted by novel indium oxide quantum dot-loaded carbon nitride heterojunctions promoted using oxidized indium monomers ( SCI-EXPANDED收录 EI收录) 被引量:4
文献类型:期刊文献
英文题名:S-scheme electron transfer promoted by novel indium oxide quantum dot-loaded carbon nitride heterojunctions promoted using oxidized indium monomers
作者:Li, Xiang[1] Wang, Yunyi[2] Wu, Ting[1] Fang, Guigan[1,3]
通信作者:Wu, T[1];Wang, YY[2]
机构:[1]Chinese Acad Forestry, Inst Chem Ind Forest Prod, Coinnovat Ctr Efficient Proc & Utilizat Forest Res, Key Lab Biomass Energy & Mat, Nanjing 210042, Peoples R China;[2]Qiqihar Univ, Heilongjiang Prov Key Univ Lab Proc Agr Prod, Coll Food & Bioengn, Qiqihar 161006, Peoples R China;[3]Shandong Huatai Paper Co Ltd, Dongying 257335, Shandong, Peoples R China
年份:2024
卷号:668
起止页码:658-665
外文期刊名:JOURNAL OF COLLOID AND INTERFACE SCIENCE
收录:;EI(收录号:20240092510);Scopus(收录号:2-s2.0-85191656133);WOS:【SCI-EXPANDED(收录号:WOS:001237006200002)】;
基金:This work was financially supported by the foundation of the National Key Research and Development Program (2022YFC2105503) "Industrial Demonstration of Key Technologies for 'Bio-Virgin Pulp ' and Functionalized lignin preparation " & "Jiebangguashuai " Science and Technology Project of Yibin City (2022JB009) .
语种:英文
外文关键词:In 2 O 3 quantum dot; beta-O-4 bond; S-scheme; Lignin; Sunlight-driven photocatalytic
摘要:The graphitic carbon nitride (g-C3N4) photocatalysis has emerged as a clean method for cleaving lignin-linked bonds due to its mild and sunlight-driven reaction conditions. The fast electron-hole pair complex of g-C3N4 constrains its degradation efficiency, making the heterojunction construction a popular solution. The conventional methods of preparing g-C3N4 heterojunctions by physical mixing destroy pi-conjugations in g-C3N4, reducing the adsorption of lignin containing benzene rings. In this study, a novel indium oxide (In2O3) quantum dot-g-C3N4 0D/2D heterojunction was prepared through the high-temperature oxidation of pre-prepared indiumdoped g-C3N4. The introduction of In2O3 at the quantum dot level minimizes the interference with lignin adsorption capacity. The strong combination of the two (In2O3 and g-C3N4) increases the intersection interface area, promoting the S-scheme transfer route of the photogenerated electrons. Consequently, this enhances the photoelectric conversion efficiency and carrier lifetime of the heterojunction, and inhibits the rapid recombination of photogenerated electron-hole pairs in g-C3N4. The proposed heterojunction was 3 times more efficient than g-C3N4 alone for selective cleavage of lignin beta-O-4 bonds after 2 h of sunlight irradiation. Combined with
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