文献类型：期刊文献

英文题名：Chitosan Immobilized Chinese Gallotannin: A Potential Adsorbent to Enrich the Rare Metals Ge (IV), Ga (Iii), and in (Iii)

作者：Li, Kun[1,3] Huang, Cheng[1,2] Zhang, Hong[1,3] Zhang, Wenwen[1,3] Sun, Yanlin[2] Xing, Shujie[1] Shao, Ying[1] Zhu, Jing[1] Chen, Yalan[1] Chen, Long[1]

第一作者：Li, Kun;李昆

机构：[1] Xinyang Agriculture and Forestry University, Xinyang, 464000, China; [2] College of Chemical Engineering, Kunming University of Science and Technology, Yunnan, Kunming, 650500, China; [3] Institute of Highland Forest Science, Chinese Academy of Forestry, Yunnan, Kunming, 650233, China

年份：2023

外文期刊名：SSRN

收录：EI(收录号：20230200028)

语种：英文

外文关键词：Adsorption - Chitosan - Condensation reactions - Flavonoids - Fourier transform infrared spectroscopy - Gallium compounds - Grafting (chemical) - Indium compounds - Integral equations - Metal ions - Molar ratio - Monolayers - Nuclear magnetic resonance spectroscopy - Tannins

摘要：In this study, a solid adsorbent based on Chinese gallotannin and chitosan was generated and applied to adsorb rare and scattered metals, including Ge (IV), Ga (III), and In (III), from simulated zinc plant leachates. Fourier-transform infrared spectroscopy (FTIR) and solid state nuclear magnetic resonance (SSNMR) were performed to characterize the grafting way of Chinese gallotannin on the chitosan matrix. It was clearly showed that Chinese gallotannin was immobilized on the chitosan by Schiff-base condensation and phenol-formaldehyde reaction at the molar ratio of glutaraldehyde to tannin of 2:1. And the amount of chitosan amino groups was ten times that of tannin, with an initial pH of 4. The adsorption experiments showed that an appropriate increase in pH was more beneficial to enhance the adsorption capacity of immobilized Chinese gallotannin (ICGT). At a temperature exceeding 30oC, the immobilized tannin became less sensitive to temperature. Adsorption kinetics studies showed that the adsorption of the three scattered metals by ICGT followed a quasi-second-order kinetic equation, with chemisorption as the mechanism. The adsorption isotherm was well fitted by the Langmuir model, indicating uniform adsorption sites on the surface of ICGT. The adsorption capacities of Ge (IV), Ga (III), and In (III) in solution by the adsorption model of monolayer were 61.39 mg/g, 63.82 mg/g, and 59.92 mg/g, respectively. Mechanical property and stability tests showed that ICGT had good resistance to harsh adsorption conditions of scattered metal ions. ? 2023, The Authors. All rights reserved.